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QRD1113/1114 Reflective Object Sensor
September 2006
QRD1113/1114 Reflective Object Sensor
Features
Phototransistor Output PACKAGE DIMENSIONS No contact surface sensing Unfocused for sensing diffused surfaces Compact Package Daylight filter on sensor
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Description
The QRD1113/14 reflective sensor consists of an infrared emitting diode and an NPN silicon photodarlington mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1113/14. The photodarlington responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector.
Package Dimensions
0.083 (2.11) OPTICAL CENTERLINE 0.240 (6.10) 0.120 (3.05) PIN 1 INDICATOR
0.173 (4.39)
0.183 (4.65)
0.500 (12.7) MIN
0.020 (0.51) SQ. (4X)
2 3
0.100 (2.54)
1 4
Schematic
2 3
0.083 (2.11)
PIN 1 COLLECTOR PIN 2 EMITTER
PIN 3 ANODE PIN 4 CATHODE
NOTES: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. 3. Pins 2 and 4 typically .050" shorter than pins 1 and 3. 4. Dimensions controlled at housing surface.
1
4
(c)2005 Fairchild Semiconductor Corporation
1
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QRD1113/1114 Rev. 1.0.1
QRD1113/1114 Reflective Object Sensor
Absolute Maximum Ratings (TA = 25C unless otherwise specified)
Parameter
Operating Temperature Storage Temperature Lead Temperature (Solder EMITTER Continuous Forward Current Reverse Voltage Power Dissipation(1) SENSOR Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1) VCEO VECO PD 100 30 V V mW IF VR PD 50 5 100 mA V mW Iron)(2,3) Lead Temperature (Solder Flow)(2,3)
Symbol
TOPR TSTG TSOL-I TSOL-F
Rating
-40 to +85 -40 to +100 240 for 5 sec 260 for 10 sec
Units
C C C C
Electrical/Optical Characteristics (TA = 25C)
Symbol Parameter
INPUT (Emitter) VF IR PE BVCEO BVECO ID COUPLED IC(ON) IC(ON) VCE(SAT) ICX tr tf QRD1113 Collector Current QRD1114 Collector Current Collector Emitter Saturation Voltage Cross Talk Rise Time Fall Time IF = 20mA, VCE = 5V, D = .050"(6,8) IF = 20mA, VCE = 5V, D = .050"(6,8) IF = 40mA, IC = 100A, D = .050"(6,8) IF = 20mA, VCE = 5V, EE = 0(7) VCE = 5V, RL = 100, IC(ON) = 5mA 0.300 1 -- -- -- -- -- -- -- .200 10 50 -- -- 0.4 10 -- -- mA mA V A s s Forward Voltage Reverse Leakage Current Peak Emission Wavelength Collector-Emitter Breakdown Emitter-Collector Breakdown Dark Current IF = 20mA VR = 5V IF = 20mA IC = 1mA IE = 0.1mA VCE = 10 V, IF = 0mA -- -- -- 30 5 -- -- -- 940 -- -- -- 1.7 100 -- -- -- 100 V A nm V V nA
Test Conditions
Min.
Typ.
Max.
Units
OUTPUT (Sensor)
Notes: 1. Derate power dissipation linearly 1.33 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron tip 1/16" (1.6 mm) minimum from housing. 5. As long as leads are not under any stress or spring tension. 6. D is the distance from the sensor face to the reflective surface. 7. Crosstalk (ICK) is the collector current measured with the indicated current on the input diode and with no reflective surface. 8. Measured using Eastman Kodak neutral white test card with 90% diffused reflecting as a reflecting surface.
2 QRD1113/1114 Rev. 1.0.1
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QRD1113/1114 Reflective Object Sensor
Typical Performance Curves
Fig. 1 Forward Voltage vs. Forward Current
1.60 1.40
Fig. 2 Normalized Collector Current vs. Forward Current
10.0
Fig. 3 Normalized Collector Current vs. Temperature
1.0
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
VF - FORWARD VOLTAGE (mV)
1.20 1.00 0.20 0.60
1.00
0.8
0.6
0.10
0.4
0.01 VCE = 5 V D = .05" .001
0.2
0.40 0.20 0.1 1.0 10 100
IF = 10 mA VCE = 5 V
0 0 10 20 30 40 50 -50 -25 0 25 50 75
IF - FORWARD CURRENT (mA)
IF - FORWARD CURRENT (mA)
TA - AMBIENT TEMPERATURE (C)
Fig. 4 Normalized Collector Dark Current vs. Temperature
102 VCE = 10 V
NORMALIZED - COLLECTOR CURRENT (mA)
Fig. 5 Normalized Collector Current vs. Distance
1.0 .9 .8 .7 .6 .5 .4 .3 .2 .1 0 0 50 100 150 200 250 300 350 400 450 500 IF = 20 mA VCE = 5 V
ID - COLLECTOR DARK CURRENT
101
10
1.0
10-1
10-2
10-3 -50 -25 0 25 50 75 100
REFLECTIVE SURFACE DISTANCE (mils)
TA - AMBIENT TEMPERATURE (C)
3 QRD1113/1114 Rev. 1.0.1
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QRD1113/1114 Reflective Object Sensor
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I20
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
4 QRD1113/1114 Rev. 1.0.1
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